System Highlights:
- Glovebox-integrated ALD for controlled atmosphere deposition (less than 1ppm O2 & H2O)
- New capabilities for Al2O3 and HfO2 thin film deposition
- Enables precise layering and composite structure creation
Research Opportunities:
- Creation of ultrathin Al2O3 and HfO2 films and their composites
- Studies on Al2O3/HfO2
- Investigation of electrical properties of high-k dielectric materials
Potential Applications:
High-density capacitor fabrication for advanced electronics
Exploration of ferroelectric properties in doped HfO2 films
Development of novel gate dielectrics for semiconductor and/or 2D devices

Next Steps:
- Introductory workshops will be held to familiarize researchers with the system’s capabilities and the new materials.
- The facility is now accepting research proposals that leverage these new deposition capabilities.
- We encourage collaborative projects to explore the full potential of Al2O3 and HfO2 in various applications.
This new ALD system represents a significant advancement in STnano research infrastructure, positioning us at the forefront of materials science and nanotechnology research. For more information, training sessions, or to discuss potential research projects, please contact STnano facility manager
This work has benefited from the government grant Program PEPR-Spin, project SPINMAT, operated by the French National Research Agency as part of the France 2030 program, reference « ANR-22-EXSP-0007»